Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

We propose to use a bilayer insulator (2.5 nm Al(2)O(3) + 35 nm SiO2) as an alternative to a conventional uni-layer Al(2)O(3) (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module...

Descripción completa

Detalles Bibliográficos
Autores principales: Mukherjee, Kalparupa, De Santi, Carlo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7660341/
https://www.ncbi.nlm.nih.gov/pubmed/33114060
http://dx.doi.org/10.3390/ma13214740

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7660341/
https://www.ncbi.nlm.nih.gov/pubmed/33114060
http://dx.doi.org/10.3390/ma13214740

Ejemplares similares