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Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
We propose to use a bilayer insulator (2.5 nm Al(2)O(3) + 35 nm SiO2) as an alternative to a conventional uni-layer Al(2)O(3) (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7660341/ https://www.ncbi.nlm.nih.gov/pubmed/33114060 http://dx.doi.org/10.3390/ma13214740 |