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Analysis of Various Pickup Coil Designs in Nonmodule-Type GaN Power Semiconductors
Gallium nitride (GaN) devices are advantageous over conventional Silicon (Si) devices in terms of their small size, low on-resistance, and high dv/dt characteristics; these ensure a high integrated density circuit configuration, high efficiency, and fast switching speed. Therefore, in the diagnosis...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7662748/ https://www.ncbi.nlm.nih.gov/pubmed/33113833 http://dx.doi.org/10.3390/s20216066 |