Investigation of Ga(2)O(3)-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

In this work, Ga(2)O(3) films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O(2)) plasma. To improve the quality of Ga(2)O(3) films, they were annealed in an O(2) ambient furnace system for 15 min at 700, 800,...

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Detalles Bibliográficos
Autores principales: Chu, Shao-Yu, Shen, Meng-Xian, Yeh, Tsung-Han, Chen, Chia-Hsun, Lee, Ching-Ting, Lee, Hsin-Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7662978/
https://www.ncbi.nlm.nih.gov/pubmed/33138043
http://dx.doi.org/10.3390/s20216159

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7662978/
https://www.ncbi.nlm.nih.gov/pubmed/33138043
http://dx.doi.org/10.3390/s20216159

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