Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Our laboratory has previously revealed the use of metal-semiconductor-metal (MSM) varactors against malicious pulses, as well as completed the related verification and measurements of such a circuit. To improve the reliability of this protection module further, in this study, we deposited a gallium...

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Detalles Bibliográficos
Autores principales: Hsieh, Yu-Li, Chang, Liann-Be, Jeng, Ming-Jer, Li, Chung-Yi, Shih, Chien-Fu, Wang, Hung-Tsung, Ding, Zi-Xin, Chang, Chia-Ning, Lo, Hao-Zong, Chiang, Yuan-Po
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7662979/
https://www.ncbi.nlm.nih.gov/pubmed/33158142
http://dx.doi.org/10.3390/ma13214956

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7662979/
https://www.ncbi.nlm.nih.gov/pubmed/33158142
http://dx.doi.org/10.3390/ma13214956

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