High-temperature etching of SiC in SF(6)/O(2) inductively coupled plasma

In this work, we demonstrate an effective way of deep (30 µm depth), highly oriented (90° sidewall angle) structures formation with sub-nanometer surface roughness (R(ms) = 0.7 nm) in silicon carbide (SiC). These structures were obtained by dry etching in SF(6)/O(2) inductively coupled plasma (ICP)...

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Detalles Bibliográficos
Autores principales: Osipov, Artem A., Iankevich, Gleb A., Speshilova, Anastasia B., Osipov, Armenak A., Endiiarova, Ekaterina V., Berezenko, Vladimir I., Tyurikova, Irina A., Tyurikov, Kirill S., Alexandrov, Sergey E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7673126/
https://www.ncbi.nlm.nih.gov/pubmed/33203949
http://dx.doi.org/10.1038/s41598-020-77083-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7673126/
https://www.ncbi.nlm.nih.gov/pubmed/33203949
http://dx.doi.org/10.1038/s41598-020-77083-1

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