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High-temperature etching of SiC in SF(6)/O(2) inductively coupled plasma
In this work, we demonstrate an effective way of deep (30 µm depth), highly oriented (90° sidewall angle) structures formation with sub-nanometer surface roughness (R(ms) = 0.7 nm) in silicon carbide (SiC). These structures were obtained by dry etching in SF(6)/O(2) inductively coupled plasma (ICP)...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7673126/ https://www.ncbi.nlm.nih.gov/pubmed/33203949 http://dx.doi.org/10.1038/s41598-020-77083-1 |