Simulation of Copper Electrodeposition in Through-Hole Vias

Copper electrodeposition processes for filling metallized through-hole (TH) and through-silicon vias (TSV) depend on spatially selective breakdown of a co-adsorbed polyether-chloride adlayer within the recessed surface features. In this work, a co-adsorption-dependent suppression model that has prev...

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Detalles Bibliográficos
Autores principales: Braun, T. M., Josell, D., John, J., Moffat, T. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7675924/
https://www.ncbi.nlm.nih.gov/pubmed/33223561

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7675924/
https://www.ncbi.nlm.nih.gov/pubmed/33223561

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