Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (<...

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Detalles Bibliográficos
Autores principales: Pogna, Eva A. A., Asgari, Mahdi, Zannier, Valentina, Sorba, Lucia, Viti, Leonardo, Vitiello, Miriam S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7677312/
https://www.ncbi.nlm.nih.gov/pubmed/33298850
http://dx.doi.org/10.1038/s41377-020-00425-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7677312/
https://www.ncbi.nlm.nih.gov/pubmed/33298850
http://dx.doi.org/10.1038/s41377-020-00425-1

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