Analog and Digital Bipolar Resistive Switching in Co–Al-Layered Double Hydroxide Memristor

We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While...

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Detalles Bibliográficos
Autores principales: Sun, Yanmei, Li, Li, Shi, Keying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7690433/
https://www.ncbi.nlm.nih.gov/pubmed/33105722
http://dx.doi.org/10.3390/nano10112095

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7690433/
https://www.ncbi.nlm.nih.gov/pubmed/33105722
http://dx.doi.org/10.3390/nano10112095

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