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Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM
A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). A poly-Si 1T-DRAM cell operates as a memory by u...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7690446/ https://www.ncbi.nlm.nih.gov/pubmed/33105643 http://dx.doi.org/10.3390/mi11110952 |