Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM

A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). A poly-Si 1T-DRAM cell operates as a memory by u...

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Detalles Bibliográficos
Autores principales: Yoo, Songyi, Sun, Wookyung, Shin, Hyungsoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7690446/
https://www.ncbi.nlm.nih.gov/pubmed/33105643
http://dx.doi.org/10.3390/mi11110952

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7690446/
https://www.ncbi.nlm.nih.gov/pubmed/33105643
http://dx.doi.org/10.3390/mi11110952

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