Synthesis of High-Density Indium Oxide Nanowires with Low Electrical Resistivity

In this study, indium oxide nanowires of high-density were synthesized by chemical vapor deposition (CVD) through a vapor–liquid–solid (VLS) mechanism without carrier gas. The indium oxide nanowires possess great morphology with an aspect ratio of over 400 and an average diameter of 50 nm; the lengt...

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Detalles Bibliográficos
Autores principales: Chen, Yu-Yang, Yang, Shu-Meng, Lu, Kuo-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7690706/
https://www.ncbi.nlm.nih.gov/pubmed/33113939
http://dx.doi.org/10.3390/nano10112100

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7690706/
https://www.ncbi.nlm.nih.gov/pubmed/33113939
http://dx.doi.org/10.3390/nano10112100

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