In-Built N(+) Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

In this paper, we present an in-built N(+) pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate (CG) and a polarity gate (PG). The PG is bi...

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Detalles Bibliográficos
Autores principales: Li, Jun, Liu, Ying, Wei, Su-fen, Shan, Chan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7692596/
https://www.ncbi.nlm.nih.gov/pubmed/33120922
http://dx.doi.org/10.3390/mi11110960

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7692596/
https://www.ncbi.nlm.nih.gov/pubmed/33120922
http://dx.doi.org/10.3390/mi11110960

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