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In-Built N(+) Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance
In this paper, we present an in-built N(+) pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate (CG) and a polarity gate (PG). The PG is bi...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7692596/ https://www.ncbi.nlm.nih.gov/pubmed/33120922 http://dx.doi.org/10.3390/mi11110960 |
Sumario: | In this paper, we present an in-built N(+) pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate (CG) and a polarity gate (PG). The PG is biased at −0.7 V to induce a P(+) region at the source side, leaving an N(+) pocket between the source and the channel. This technique yields an N(+) pocket that is realized in the in-built architecture and removes the need for additional chemical doping. Calibrated 2-D simulations have demonstrated that the introduction of the N(+) pocket yields a higher I(ON) and a steeper average subthreshold swing when compared to conventional ED-TFET. Further, a local minimum on the conduction band edge (E(C)) curve at the tunneling junction is observed, leading to a dramatic reduction in the tunneling width. As a result, the in-built N(+) pocket ED-TFET significantly improves the DC and analog/RF figure-of-merits and, hence, can serve as a better candidate for low-power applications. |
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