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In-Built N(+) Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance
In this paper, we present an in-built N(+) pocket electrically doped tunnel FET (ED-TFET) based on the polarity bias concept that enhances the DC and analog/RF performance. The proposed device begins with a MOSFET like structure (n-p-n) with a control gate (CG) and a polarity gate (PG). The PG is bi...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7692596/ https://www.ncbi.nlm.nih.gov/pubmed/33120922 http://dx.doi.org/10.3390/mi11110960 |