Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF(4) plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC curre...

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Detalles Bibliográficos
Autores principales: Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Kim, Seung Mo, Lee, Sang Kyung, Lee, Byoung Hun, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7693001/
https://www.ncbi.nlm.nih.gov/pubmed/33114425
http://dx.doi.org/10.3390/nano10112116

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7693001/
https://www.ncbi.nlm.nih.gov/pubmed/33114425
http://dx.doi.org/10.3390/nano10112116

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