Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO(2) gate dielectric layer. The γ-ray radiation ha...

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Detalles Bibliográficos
Autores principales: Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Lee, Jung-Hee, Bae, Youngho, Jung, Hyun-Wook, Kang, Soo Cheol, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7693284/
https://www.ncbi.nlm.nih.gov/pubmed/33143313
http://dx.doi.org/10.3390/nano10112175

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7693284/
https://www.ncbi.nlm.nih.gov/pubmed/33143313
http://dx.doi.org/10.3390/nano10112175

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