Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO(2)/TaO(x)/TiN Artificial Synaptic Device

Here, we propose a Pt/HfO(2)/TaO(x)/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO(2)/TaO(x)/TiN) information deposited by DC sputtering and atomic layer deposition (ALD). The self-rectifying resi...

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Detalles Bibliográficos
Autores principales: Ryu, Hojeong, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7693614/
https://www.ncbi.nlm.nih.gov/pubmed/33138118
http://dx.doi.org/10.3390/nano10112159

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7693614/
https://www.ncbi.nlm.nih.gov/pubmed/33138118
http://dx.doi.org/10.3390/nano10112159

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