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Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO(2)/TaO(x)/TiN Artificial Synaptic Device
Here, we propose a Pt/HfO(2)/TaO(x)/TiN artificial synaptic device that is an excellent candidate for artificial synapses. First, XPS analysis is conducted to provide the dielectric (HfO(2)/TaO(x)/TiN) information deposited by DC sputtering and atomic layer deposition (ALD). The self-rectifying resi...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7693614/ https://www.ncbi.nlm.nih.gov/pubmed/33138118 http://dx.doi.org/10.3390/nano10112159 |