On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas

In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F(2)/N(2) gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching plat...

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Detalles Bibliográficos
Autores principales: Kafle, Bishal, Ridoy, Ahmed Ismail, Miethig, Eleni, Clochard, Laurent, Duffy, Edward, Hofmann, Marc, Rentsch, Jochen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7695004/
https://www.ncbi.nlm.nih.gov/pubmed/33172194
http://dx.doi.org/10.3390/nano10112214

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7695004/
https://www.ncbi.nlm.nih.gov/pubmed/33172194
http://dx.doi.org/10.3390/nano10112214

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