Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Detalles Bibliográficos
Autores principales: Zhang, Chunzi, Gunes, Ozan, Li, Yuanshi, Cui, Xiaoyu, Mohammadtaheri, Masoud, Wen, Shi-Jie, Wong, Rick, Yang, Qiaoqin, Kasap, Safa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Erratum
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697904/
https://www.ncbi.nlm.nih.gov/pubmed/33203063
http://dx.doi.org/10.3390/ma13225132
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author Zhang, Chunzi
Gunes, Ozan
Li, Yuanshi
Cui, Xiaoyu
Mohammadtaheri, Masoud
Wen, Shi-Jie
Wong, Rick
Yang, Qiaoqin
Kasap, Safa
author_facet Zhang, Chunzi
Gunes, Ozan
Li, Yuanshi
Cui, Xiaoyu
Mohammadtaheri, Masoud
Wen, Shi-Jie
Wong, Rick
Yang, Qiaoqin
Kasap, Safa
author_sort Zhang, Chunzi
collection PubMed
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spelling pubmed-76979042020-11-29 Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160 Zhang, Chunzi Gunes, Ozan Li, Yuanshi Cui, Xiaoyu Mohammadtaheri, Masoud Wen, Shi-Jie Wong, Rick Yang, Qiaoqin Kasap, Safa Materials (Basel) Erratum MDPI 2020-11-13 /pmc/articles/PMC7697904/ /pubmed/33203063 http://dx.doi.org/10.3390/ma13225132 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Erratum
Zhang, Chunzi
Gunes, Ozan
Li, Yuanshi
Cui, Xiaoyu
Mohammadtaheri, Masoud
Wen, Shi-Jie
Wong, Rick
Yang, Qiaoqin
Kasap, Safa
Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160
title Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160
title_full Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160
title_fullStr Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160
title_full_unstemmed Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160
title_short Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO(2) Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160
title_sort erratum: zhang, c. et al., the effect of substrate biasing during dc magnetron sputtering on the quality of vo(2) thin films and their insulator–metal transition behavior. materials 2019, 12, 2160
topic Erratum
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697904/
https://www.ncbi.nlm.nih.gov/pubmed/33203063
http://dx.doi.org/10.3390/ma13225132
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