Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates

Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface...

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Detalles Bibliográficos
Autores principales: Wu, Jinxing, Li, Peixian, Xu, Shengrui, Zhou, Xiaowei, Tao, Hongchang, Yue, Wenkai, Wang, Yanli, Wu, Jiangtao, Zhang, Yachao, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697943/
https://www.ncbi.nlm.nih.gov/pubmed/33202801
http://dx.doi.org/10.3390/ma13225118

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7697943/
https://www.ncbi.nlm.nih.gov/pubmed/33202801
http://dx.doi.org/10.3390/ma13225118

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