Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

The impact of hydrocarbon-molecular (C(3)H(6))-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white s...

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Detalles Bibliográficos
Autores principales: Onaka-Masada, Ayumi, Kadono, Takeshi, Okuyama, Ryosuke, Hirose, Ryo, Kobayashi, Koji, Suzuki, Akihiro, Koga, Yoshihiro, Kurita, Kazunari
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7699194/
https://www.ncbi.nlm.nih.gov/pubmed/33228009
http://dx.doi.org/10.3390/s20226620

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7699194/
https://www.ncbi.nlm.nih.gov/pubmed/33228009
http://dx.doi.org/10.3390/s20226620

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