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Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure
GaN quantum dots embedded in nanowires have attracted much attention due to their superior optical properties. However, due to the large surface-to-volume ratio of the nanowire, the impacts of surface states are the primary issue responsible for the degradation of internal quantum efficiency (IQE) i...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7699813/ https://www.ncbi.nlm.nih.gov/pubmed/33233685 http://dx.doi.org/10.3390/nano10112299 |