Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

GaN quantum dots embedded in nanowires have attracted much attention due to their superior optical properties. However, due to the large surface-to-volume ratio of the nanowire, the impacts of surface states are the primary issue responsible for the degradation of internal quantum efficiency (IQE) i...

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Detalles Bibliográficos
Autores principales: Deng, Jun, Hao, Zhibiao, Wang, Lai, Yu, Jiadong, Wang, Jian, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Li, Hongtao, Zhao, Wei, Liang, Xihui, Wang, Junjun, Luo, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7699813/
https://www.ncbi.nlm.nih.gov/pubmed/33233685
http://dx.doi.org/10.3390/nano10112299

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7699813/
https://www.ncbi.nlm.nih.gov/pubmed/33233685
http://dx.doi.org/10.3390/nano10112299

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