Valley interference and spin exchange at the atomic scale in silicon

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes arising from this competition. However, they expl...

Descripción completa

Detalles Bibliográficos
Autores principales: Voisin, B., Bocquel, J., Tankasala, A., Usman, M., Salfi, J., Rahman, R., Simmons, M. Y., Hollenberg, L. C. L., Rogge, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7705737/
https://www.ncbi.nlm.nih.gov/pubmed/33257680
http://dx.doi.org/10.1038/s41467-020-19835-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7705737/
https://www.ncbi.nlm.nih.gov/pubmed/33257680
http://dx.doi.org/10.1038/s41467-020-19835-1

Ejemplares similares