Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes

Carrier imbalance resulting from stronger electron injection from ZnO into quantum‐dot (QD) emissive layer than hole injection is one critical issue that constrains the performance of QDs‐based light‐emitting diodes (QLEDs). This study reports highly efficient inverted QLEDs enabled by periodic inse...

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Detalles Bibliográficos
Autores principales: Wu, Qianqian, Cao, Fan, Wang, Haoran, Kou, Jianquan, Zhang, Zi‐Hui, Yang, Xuyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7709982/
https://www.ncbi.nlm.nih.gov/pubmed/33304749
http://dx.doi.org/10.1002/advs.202001760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7709982/
https://www.ncbi.nlm.nih.gov/pubmed/33304749
http://dx.doi.org/10.1002/advs.202001760

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