Remarkable Stability Improvement of ZnO TFT with Al(2)O(3) Gate Insulator by Yttrium Passivation with Spray Pyrolysis

We report the impact of yttrium oxide (YO(x)) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al(2)O(3) gate insulator (GI). The YO(x) and ZnO films are both deposited by spray pyrolysis at 400 and 350 °C, respectively. The YO(x) passivated ZnO TFT exhibits high device perfor...

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Detalles Bibliográficos
Autores principales: Saha, Jewel Kumer, Bukke, Ravindra Naik, Mude, Narendra Naik, Jang, Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712807/
https://www.ncbi.nlm.nih.gov/pubmed/32438551
http://dx.doi.org/10.3390/nano10050976

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712807/
https://www.ncbi.nlm.nih.gov/pubmed/32438551
http://dx.doi.org/10.3390/nano10050976

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