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Remarkable Stability Improvement of ZnO TFT with Al(2)O(3) Gate Insulator by Yttrium Passivation with Spray Pyrolysis
We report the impact of yttrium oxide (YO(x)) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al(2)O(3) gate insulator (GI). The YO(x) and ZnO films are both deposited by spray pyrolysis at 400 and 350 °C, respectively. The YO(x) passivated ZnO TFT exhibits high device perfor...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712807/ https://www.ncbi.nlm.nih.gov/pubmed/32438551 http://dx.doi.org/10.3390/nano10050976 |