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Localized UV emitters on the surface of β-Ga(2)O(3)
Monoclinic gallium oxide (β-Ga(2)O(3)) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga(2)O(3) has not been regarded as a...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712825/ https://www.ncbi.nlm.nih.gov/pubmed/33273495 http://dx.doi.org/10.1038/s41598-020-76967-6 |