Localized UV emitters on the surface of β-Ga(2)O(3)

Monoclinic gallium oxide (β-Ga(2)O(3)) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga(2)O(3) has not been regarded as a...

Descripción completa

Detalles Bibliográficos
Autores principales: Huso, Jesse, McCluskey, Matthew D., Yu, Yinchuan, Islam, Md Minhazul, Selim, Farida
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712825/
https://www.ncbi.nlm.nih.gov/pubmed/33273495
http://dx.doi.org/10.1038/s41598-020-76967-6
_version_ 1783618454385852416
author Huso, Jesse
McCluskey, Matthew D.
Yu, Yinchuan
Islam, Md Minhazul
Selim, Farida
author_facet Huso, Jesse
McCluskey, Matthew D.
Yu, Yinchuan
Islam, Md Minhazul
Selim, Farida
author_sort Huso, Jesse
collection PubMed
description Monoclinic gallium oxide (β-Ga(2)O(3)) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga(2)O(3) has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.
format Online
Article
Text
id pubmed-7712825
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-77128252020-12-03 Localized UV emitters on the surface of β-Ga(2)O(3) Huso, Jesse McCluskey, Matthew D. Yu, Yinchuan Islam, Md Minhazul Selim, Farida Sci Rep Article Monoclinic gallium oxide (β-Ga(2)O(3)) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n-type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga(2)O(3) has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices. Nature Publishing Group UK 2020-12-03 /pmc/articles/PMC7712825/ /pubmed/33273495 http://dx.doi.org/10.1038/s41598-020-76967-6 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Huso, Jesse
McCluskey, Matthew D.
Yu, Yinchuan
Islam, Md Minhazul
Selim, Farida
Localized UV emitters on the surface of β-Ga(2)O(3)
title Localized UV emitters on the surface of β-Ga(2)O(3)
title_full Localized UV emitters on the surface of β-Ga(2)O(3)
title_fullStr Localized UV emitters on the surface of β-Ga(2)O(3)
title_full_unstemmed Localized UV emitters on the surface of β-Ga(2)O(3)
title_short Localized UV emitters on the surface of β-Ga(2)O(3)
title_sort localized uv emitters on the surface of β-ga(2)o(3)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7712825/
https://www.ncbi.nlm.nih.gov/pubmed/33273495
http://dx.doi.org/10.1038/s41598-020-76967-6
work_keys_str_mv AT husojesse localizeduvemittersonthesurfaceofbga2o3
AT mccluskeymatthewd localizeduvemittersonthesurfaceofbga2o3
AT yuyinchuan localizeduvemittersonthesurfaceofbga2o3
AT islammdminhazul localizeduvemittersonthesurfaceofbga2o3
AT selimfarida localizeduvemittersonthesurfaceofbga2o3

Ejemplares similares