Atomic threshold-switching enabled MoS(2) transistors towards ultralow-power electronics

Power dissipation is a fundamental issue for future chip-based electronics. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. However, field-effect transistors based on two-dimensional materials are still...

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Detalles Bibliográficos
Autores principales: Hua, Qilin, Gao, Guoyun, Jiang, Chunsheng, Yu, Jinran, Sun, Junlu, Zhang, Taiping, Gao, Bin, Cheng, Weijun, Liang, Renrong, Qian, He, Hu, Weiguo, Sun, Qijun, Wang, Zhong Lin, Wu, Huaqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7719160/
https://www.ncbi.nlm.nih.gov/pubmed/33277501
http://dx.doi.org/10.1038/s41467-020-20051-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7719160/
https://www.ncbi.nlm.nih.gov/pubmed/33277501
http://dx.doi.org/10.1038/s41467-020-20051-0

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