Gallium oxide nanowires for UV detection with enhanced growth and material properties

In the last decade, interest in the use of beta gallium oxide (β-Ga(2)O(3)) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga(2)O(3) has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exh...

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Detalles Bibliográficos
Autores principales: Alhalaili, Badriyah, Bunk, Ryan James, Mao, Howard, Cansizoglu, Hilal, Vidu, Ruxandra, Woodall, Jerry, Islam, M. Saif
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7722892/
https://www.ncbi.nlm.nih.gov/pubmed/33293565
http://dx.doi.org/10.1038/s41598-020-78326-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7722892/
https://www.ncbi.nlm.nih.gov/pubmed/33293565
http://dx.doi.org/10.1038/s41598-020-78326-x

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