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Gallium oxide nanowires for UV detection with enhanced growth and material properties
In the last decade, interest in the use of beta gallium oxide (β-Ga(2)O(3)) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga(2)O(3) has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exh...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7722892/ https://www.ncbi.nlm.nih.gov/pubmed/33293565 http://dx.doi.org/10.1038/s41598-020-78326-x |