Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/Si is commonly grown and processed to form vertical transis...

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Detalles Bibliográficos
Autores principales: Li, Chen, Lin, Hongxiao, Li, Junjie, Yin, Xiaogen, Zhang, Yongkui, Kong, Zhenzhen, Wang, Guilei, Zhu, Huilong, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7726092/
https://www.ncbi.nlm.nih.gov/pubmed/33296038
http://dx.doi.org/10.1186/s11671-020-03456-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7726092/
https://www.ncbi.nlm.nih.gov/pubmed/33296038
http://dx.doi.org/10.1186/s11671-020-03456-0

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