Stress-Induced In Situ Modification of Transition Temperature in VO(2) Films Capped by Chalcogenide

We attempted to modify the monoclinic–rutile structural phase transition temperature (T(tr)) of a VO(2) thin film in situ through stress caused by amorphous–crystalline phase change of a chalcogenide layer on it. VO(2) films on C- or R-plane Al(2)O(3) substrates were capped by Ge(2)Sb(2)Te(5) (GST)...

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Detalles Bibliográficos
Autores principales: Sakai, Joe, Kuwahara, Masashi, Okimura, Kunio, Uehara, Yoichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7729558/
https://www.ncbi.nlm.nih.gov/pubmed/33291745
http://dx.doi.org/10.3390/ma13235541

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7729558/
https://www.ncbi.nlm.nih.gov/pubmed/33291745
http://dx.doi.org/10.3390/ma13235541

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