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Plasma Parameters and Etching Characteristics of SiO(x)N(y) Films in CF(4) + O(2) + X (X = C(4)F(8) or CF(2)Br(2)) Gas Mixtures

In this work, we carried out the study of CF(4) + O(2) + X (X = C(4)F(8) or CF(2)Br(2)) gas chemistries in respect to the SiO(x)N(y) reactive-ion etching process in a low power regime. The interest in the liquid CF(2)Br(2) as an additive component is motivated by its generally unknown plasma etching...

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Detalles Bibliográficos
Autores principales: Nam, Yunho, Efremov, Alexander, Lee, Byung Jun, Kwon, Kwang-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730825/
https://www.ncbi.nlm.nih.gov/pubmed/33271912
http://dx.doi.org/10.3390/ma13235476