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Plasma Parameters and Etching Characteristics of SiO(x)N(y) Films in CF(4) + O(2) + X (X = C(4)F(8) or CF(2)Br(2)) Gas Mixtures
In this work, we carried out the study of CF(4) + O(2) + X (X = C(4)F(8) or CF(2)Br(2)) gas chemistries in respect to the SiO(x)N(y) reactive-ion etching process in a low power regime. The interest in the liquid CF(2)Br(2) as an additive component is motivated by its generally unknown plasma etching...
Autores principales: | Nam, Yunho, Efremov, Alexander, Lee, Byung Jun, Kwon, Kwang-Ho |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7730825/ https://www.ncbi.nlm.nih.gov/pubmed/33271912 http://dx.doi.org/10.3390/ma13235476 |
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