Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination: A First-Principles Study

[Image: see text] Thermal atomic layer etch (ALE) of W metal can be achieved by sequential self-limiting oxidation and chlorination reactions at elevated temperatures. In this paper, we analyze the reaction mechanisms of W ALE using the first-principles simulation. We show that oxidizing agents such...

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Detalles Bibliográficos
Autores principales: Kondati Natarajan, Suresh, Nolan, Michael, Theofanis, Patrick, Mokhtarzadeh, Charles, Clendenning, Scott B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7735657/
https://www.ncbi.nlm.nih.gov/pubmed/32666796
http://dx.doi.org/10.1021/acsami.0c06628

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7735657/
https://www.ncbi.nlm.nih.gov/pubmed/32666796
http://dx.doi.org/10.1021/acsami.0c06628

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