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Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination: A First-Principles Study

[Image: see text] Thermal atomic layer etch (ALE) of W metal can be achieved by sequential self-limiting oxidation and chlorination reactions at elevated temperatures. In this paper, we analyze the reaction mechanisms of W ALE using the first-principles simulation. We show that oxidizing agents such...

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Detalles Bibliográficos
Autores principales:	Kondati Natarajan, Suresh, Nolan, Michael, Theofanis, Patrick, Mokhtarzadeh, Charles, Clendenning, Scott B.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2020
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7735657/ https://www.ncbi.nlm.nih.gov/pubmed/32666796 http://dx.doi.org/10.1021/acsami.0c06628

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