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Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor
1D semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement effect. Herein, we use a top-down two-step prepara...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7736687/ https://www.ncbi.nlm.nih.gov/pubmed/33364143 http://dx.doi.org/10.3762/bjnano.11.166 |