High zT and Its Origin in Sb‐doped GeTe Single Crystals

A record high zT of 2.2 at 740 K is reported in Ge(0.92)Sb(0.08)Te single crystals, with an optimal hole carrier concentration ≈4 × 10(20) cm(−3) that simultaneously maximizes the power factor (PF) ≈56 µW cm(−1 )K(−2) and minimizes the thermal conductivity ≈1.9 Wm(−1) K(−1). In addition to the prese...

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Detalles Bibliográficos
Autores principales: Vankayala, Ranganayakulu K., Lan, Tian‐Wey, Parajuli, Prakash, Liu, Fengjiao, Rao, Rahul, Yu, Shih Hsun, Hung, Tsu‐Lien, Lee, Chih‐Hao, Yano, Shin‐ichiro, Hsing, Cheng‐Rong, Nguyen, Duc‐Long, Chen, Cheng‐Lung, Bhattacharya, Sriparna, Chen, Kuei‐Hsien, Ou, Min‐Nan, Rancu, Oliver, Rao, Apparao M., Chen, Yang‐Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7740100/
https://www.ncbi.nlm.nih.gov/pubmed/33344133
http://dx.doi.org/10.1002/advs.202002494

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7740100/
https://www.ncbi.nlm.nih.gov/pubmed/33344133
http://dx.doi.org/10.1002/advs.202002494

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