Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulat...

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Detalles Bibliográficos
Autores principales: Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Kaliteevski, Mikhail A., Hemmingsson, Carl
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7746736/
https://www.ncbi.nlm.nih.gov/pubmed/33335228
http://dx.doi.org/10.1038/s41598-020-79154-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7746736/
https://www.ncbi.nlm.nih.gov/pubmed/33335228
http://dx.doi.org/10.1038/s41598-020-79154-9

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