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Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulat...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7746736/ https://www.ncbi.nlm.nih.gov/pubmed/33335228 http://dx.doi.org/10.1038/s41598-020-79154-9 |
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author | Pozina, Galia Hsu, Chih-Wei Abrikossova, Natalia Kaliteevski, Mikhail A. Hemmingsson, Carl |
author_facet | Pozina, Galia Hsu, Chih-Wei Abrikossova, Natalia Kaliteevski, Mikhail A. Hemmingsson, Carl |
author_sort | Pozina, Galia |
collection | PubMed |
description | Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the [Formula: see text] -Ga(2)O(3) layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type [Formula: see text] -Ga(2)O(3) and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects. |
format | Online Article Text |
id | pubmed-7746736 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-77467362020-12-18 Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor Pozina, Galia Hsu, Chih-Wei Abrikossova, Natalia Kaliteevski, Mikhail A. Hemmingsson, Carl Sci Rep Article Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the [Formula: see text] -Ga(2)O(3) layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type [Formula: see text] -Ga(2)O(3) and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects. Nature Publishing Group UK 2020-12-17 /pmc/articles/PMC7746736/ /pubmed/33335228 http://dx.doi.org/10.1038/s41598-020-79154-9 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Pozina, Galia Hsu, Chih-Wei Abrikossova, Natalia Kaliteevski, Mikhail A. Hemmingsson, Carl Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor |
title | Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor |
title_full | Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor |
title_fullStr | Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor |
title_full_unstemmed | Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor |
title_short | Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor |
title_sort | development of β-ga(2)o(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7746736/ https://www.ncbi.nlm.nih.gov/pubmed/33335228 http://dx.doi.org/10.1038/s41598-020-79154-9 |
work_keys_str_mv | AT pozinagalia developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor AT hsuchihwei developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor AT abrikossovanatalia developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor AT kaliteevskimikhaila developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor AT hemmingssoncarl developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor |