Cargando…

Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulat...

Descripción completa

Detalles Bibliográficos
Autores principales: Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Kaliteevski, Mikhail A., Hemmingsson, Carl
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7746736/
https://www.ncbi.nlm.nih.gov/pubmed/33335228
http://dx.doi.org/10.1038/s41598-020-79154-9
_version_ 1783624853194014720
author Pozina, Galia
Hsu, Chih-Wei
Abrikossova, Natalia
Kaliteevski, Mikhail A.
Hemmingsson, Carl
author_facet Pozina, Galia
Hsu, Chih-Wei
Abrikossova, Natalia
Kaliteevski, Mikhail A.
Hemmingsson, Carl
author_sort Pozina, Galia
collection PubMed
description Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the [Formula: see text] -Ga(2)O(3) layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type [Formula: see text] -Ga(2)O(3) and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects.
format Online
Article
Text
id pubmed-7746736
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-77467362020-12-18 Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor Pozina, Galia Hsu, Chih-Wei Abrikossova, Natalia Kaliteevski, Mikhail A. Hemmingsson, Carl Sci Rep Article Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric field. Optimization of halide vapor phase epitaxy growth of heteroepitaxial [Formula: see text] -Ga(2)O(3) layers is demonstrated using a simulation model to predict the distribution of the ratio of gallium to oxygen precursors inside the reactor chamber. The best structural quality is obtained for layers grown at 825–850 °C and with a III/VI precursor ratio of 0.2. Although the structural and optical properties are similar, the surface morphology is more deteriorated for the [Formula: see text] -Ga(2)O(3) layers grown on 5 degree off-axis sapphire substrates compared to on-axis samples even for optimized process parameters. Cathodoluminescence with a peak at 3.3 eV is typical for unintentionally doped n-type [Formula: see text] -Ga(2)O(3) and shows the appearance of additional emissions in blue and green region at ~ 3.0, ~ 2.8, ~ 2.6 and ~ 2.4 eV, especially when the growth temperatures is lowered to 800–825 °C. Estimation of the band gap energy to ~ 4.65 eV from absorption indicates a high density of vacancy defects. Nature Publishing Group UK 2020-12-17 /pmc/articles/PMC7746736/ /pubmed/33335228 http://dx.doi.org/10.1038/s41598-020-79154-9 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Pozina, Galia
Hsu, Chih-Wei
Abrikossova, Natalia
Kaliteevski, Mikhail A.
Hemmingsson, Carl
Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_full Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_fullStr Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_full_unstemmed Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_short Development of β-Ga(2)O(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
title_sort development of β-ga(2)o(3) layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7746736/
https://www.ncbi.nlm.nih.gov/pubmed/33335228
http://dx.doi.org/10.1038/s41598-020-79154-9
work_keys_str_mv AT pozinagalia developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor
AT hsuchihwei developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor
AT abrikossovanatalia developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor
AT kaliteevskimikhaila developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor
AT hemmingssoncarl developmentofbga2o3layersgrowthonsapphiresubstratesemployingmodelingofprecursorsratioinhalidevaporphaseepitaxyreactor