Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires

The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic pro...

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Detalles Bibliográficos
Autores principales: Jiang, Nian, Joyce, Hannah J., Parkinson, Patrick, Wong-Leung, Jennifer, Tan, Hark Hoe, Jagadish, Chennupati
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7750184/
https://www.ncbi.nlm.nih.gov/pubmed/33365302
http://dx.doi.org/10.3389/fchem.2020.607481

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7750184/
https://www.ncbi.nlm.nih.gov/pubmed/33365302
http://dx.doi.org/10.3389/fchem.2020.607481

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