Comparison of the Extended Gate Field-Effect Transistor with Direct Potentiometric Sensing for Super-Nernstian InN/InGaN Quantum Dots

[Image: see text] We systematically study the sensitivity and noise of an InN/InGaN quantum dot (QD) extended gate field-effect transistor (EGFET) with super-Nernstian sensitivity and directly compare the performance with potentiometric sensing. The QD sensor exhibits a sensitivity of −80 mV/decade...

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Detalles Bibliográficos
Autores principales: Rao, Lujia, Wang, Peng, Qian, Yinping, Zhou, Guofu, Nötzel, Richard
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7758944/
https://www.ncbi.nlm.nih.gov/pubmed/33376918
http://dx.doi.org/10.1021/acsomega.0c05364

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7758944/
https://www.ncbi.nlm.nih.gov/pubmed/33376918
http://dx.doi.org/10.1021/acsomega.0c05364

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