Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate...

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Detalles Bibliográficos
Autores principales: Wu, Gwomei, Sahoo, Anup K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7759981/
https://www.ncbi.nlm.nih.gov/pubmed/33260908
http://dx.doi.org/10.3390/nano10122357

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7759981/
https://www.ncbi.nlm.nih.gov/pubmed/33260908
http://dx.doi.org/10.3390/nano10122357

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