Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate. The electrical characteristics were evaluated with different sizes in channel width using fixed channel length. The distributions in terms of threshold voltage and current on–off level along the different channel width sizes have been discussed thoroughly. The minimum distribution of threshold voltage was observed at an oxygen flow rate of 1 sccm. The TFT electrical properties have been achieved, using an oxygen flow rate of 1 sccm with 500 µm channel width, the threshold voltage, ratio of on-current to off-current, sub-threshold swing voltage and field effect mobility to be 0.54 V, 10(6), 0.15 V/decade and 12.3 cm(2)/V·s, respectively. On the other hand, a larger channel width of 2000 µm could further improve the ratio of on-current to off-current and sub-threshold swing voltage to 10(7) and 0.11 V/decade. The optimized combination of oxygen flow and channel width showed improved electrical characteristics for TFT applications.