Thermal Impedance Characterization Using Optical Measurement Assisted by Multi-Physics Simulation for Multi-Chip SiC MOSFET Module

In this paper, an approach to determine the thermal impedance of a multi-chip silicon carbide (SiC) power module is proposed, by fusing optical measurement and multi-physics simulations. The tested power module consists of four parallel SiC metal-oxide semiconductor field-effect transistors (MOSFETs...

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Detalles Bibliográficos
Autores principales: Kim, Min-Ki, Yoon, Sang Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7760757/
https://www.ncbi.nlm.nih.gov/pubmed/33265986
http://dx.doi.org/10.3390/mi11121060

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7760757/
https://www.ncbi.nlm.nih.gov/pubmed/33265986
http://dx.doi.org/10.3390/mi11121060

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